Up to lớn 3,500 MB/s (Seq. Read) | Up khổng lồ 2,300 MB/s (Seq. Write) | 250K IOPS (Ran. Read) | 550K IOPS (Ran. Write)
The 970 EVO Plus reaches sequential read/write speeds up to lớn 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance & higher power nguồn efficiency—along with optimized firmware, a proven Phoenix controller, & Intelligent TurboWrite boost.

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Samsung 970 EVO




The SSD that goes further

Accelerate into next-gen computing. The Samsung 970 EVO delivers breakthrough speeds, best-in-class reliability, and a broad range of capacity options up lớn 2TB*. The latest V-NAND, new Phoenix controller, and Intelligent TurboWrite technology enhance high-end gaming và 4K và 3D graphic editing.

*1GB=1,000,000,000 bytes by IDEMA. A certain portion of capacity may be used for system file and maintenance use, so the actual capacity may differ from what is indicated on the hàng hóa label.





Next màn chơi SSD speed

Feel the NVMe difference. The 970 EVO transforms high-end gaming and streamlines graphic intensive workflows with the new Phoenix controller & Intelligent TurboWrite technology. Get stunning sequential read/write speeds of 3,500/2,500 MB/s*, up lớn 32% faster writes than the previous generation.

* Performance may vary based on SSD’s firmware version, system hardware và configuration. Performance measurements based on IOmeter 1.1.0. Write performance measurements are based on Intelligent TurboWrite technology.

* kiểm tra system configuration: Intel bộ vi xử lý core i7-7700K CPU
4.2GHz, DDR4 2400MHz 32GB, OS-Windows 10 Built 10240, Chipset–ASUS PRIME Z270-A

* The sequential write performances after TurboWrite region are: 300 MB/s(250GB), 600 MB/s(500GB), 1,200 MB/s(1TB) and 1,250 MB/s(2TB). For more information on the TurboWrite, please visit samsungssd.com





Design Flexibility

The next advancement in NVMe SSD. The 970 EVO fits up khổng lồ 2TB onto the compact M.2 (2280) khung factor, greatly expanding storage capacity và saving space for other components. Samsung"s innovative giải pháp công nghệ empowers you with the capacity to do more and accomplish more.




Exceptional Endurance

The new standard in sustainable performance. Get up lớn 1,200 TBW* with a 5-year limited warranty, achieving 50 percent higher than the previous generation. The 970 EVO provides exceptional endurance powered by the latest V-NAND technology and Samsung’s quality.

* TBW: Terabytes Written* Warrantied TBW for 970 EVO: 150 TBW for 250GB model, 300 TBW for 500GB model, 600 TBW for 1TB model, 1,200 TBW for 2TB model.* 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package.



Unparalleled Reliability

Achieve a new màn chơi of drive confidence. Samsung’s advanced nickel-coated controller & heat spreader on the 970 EVO enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors & maintains optimal operating temperatures khổng lồ minimize performance drops.






Samsung Magician

Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health and speed, and even boost performance.



BrandSeriesModelHighlightsApplicationCapacityForm FactorInterfaceDimensionWeightStorage MemoryControllerCache MemorySoftwareInstallation KitWarrantyTRIM SupportS.M.A.R.T SupportGC (Garbage Collection)Encryption SupportWWN SupportDevice Sleep Mode SupportSequential ReadSequential WriteRandom Read (4KB, QD32)Random Write (4KB, QD32)Random Read (4KB, QD1)Random Write (4KB, QD1)Average power Consumption (system level)Power consumption (Idle)TRIM SupportOperating TemperatureShock
970 EVO
Samsung 970 EVO Series MZ-V7E1T0BW Internal Solid State Drive (SSD), M.2 (2280) khung Factor, 1TB Capacity, Up to 3,400 MB/s (Seq. Read), Up to lớn 2,500 MB/s (Seq. Write), Samsung Phoenix Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 1 GB Low nguồn DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

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Client PCs
1 TB (1 GB=1 Billionbyte by IDEMA)
M.2 2280
PCIe ren 3.0 x4, NVMe 1.3
Max 80.15 x 22.15 x 2.38 (mm) (W x H x D)
Max 8.0g
Samsung V-NAND 3-bit MLC
Samsung Phoenix Controller
1 GB Low power nguồn DDR4 SDRAM
Magician Software for SSD management
Not Available
5 Year Limited Warranty or 600 TBW Limited Warranty
Special Feature
TRIM Supported
S.M.A.R.T Supported
Auto Garbage Collection Algorithm
AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
Not Supported
Up lớn 3,400 MB/sec
Up khổng lồ 2,500 MB/sec
Up lớn 500,000 IOPS
Up to lớn 450,000 IOPS
Up to 15,000 IOPS
Up lớn 50,000 IOPS
Average: 6.0 WattsMaximum: 9.0 Watts (Burst mode)
Max. 30mW
1.5 Million Hours Reliability (MTBF)
0 °C to 70 °C (Measured by SMART Temperature. Proper airflow recommended)
1,500 G và 0.5 ms (Half sine)

What is V-NAND technology?Shedding light on a whole new standard of capacity và performance.

Samsung V-NAND công nghệ overcomes the capacity limitations of traditional 2d NAND công nghệ with its revolutionary vertical design. V-NAND also applies innovative Charge Trap Flash (CTF) giải pháp công nghệ which prevents data corruption caused by cell-to-cell interference. The synergy of both structural & material innovations leads lớn improved speed, nguồn efficiency, & endurance.


Vertical expansion breaks through horizontal limit

Samsung revolutionized the storage industry by shifting the planar NAND to a vertical structure. Samsung V-NAND giải pháp công nghệ features a quality design that stacks 48 layers on đứng top of one another instead of trying to lớn decrease the cells’ pitch size. Samsung used Channel Hole công nghệ (CHT) to enable cells lớn connect vertically with one another through a cylindrical channel that runs through stacked cells.




Material innovation that no one can match

Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF technology which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges to maintain cell integrity.

This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to prevent data corruption caused by cell-to-cell interference.




Vertical architecture paves the way for amplified capacity

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND technology lets heavy-workload users và data centers store và handle more data with greatly improved capacity.

Samsung V-NAND enables up khổng lồ 100 layers of cells khổng lồ be stacked with the potential khổng lồ scale the density up khổng lồ 1 Terabit. The 2 chiều planar NAND density ceiling can only reach the minimum density of V-NAND.




Innovative algorithms equal faster performance

Traditional planar NAND memory requires the creation of sets of complex program algorithms khổng lồ prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune to lớn cell-to-cell interference.

V-NAND does not need khổng lồ go through a complex program algorithm khổng lồ write data, và this enables the memory to lớn write data up to two times faster than traditional 2d planar NAND flash memory.




Unprecedented power nguồn efficiency

Since V-NAND công nghệ has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power nguồn consumption is substantially lowered by up to 45 percent compared to planar NAND memory.




Embedded high endurance khổng lồ store your valuable data

Samsung V-NAND provides up khổng lồ twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, & employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.

In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar lớn that of 2-bit planar NAND, và even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.